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參數(shù)資料
| 型號： | LBC857CLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進(jìn)步黨 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 153K |
| 代理商： | LBC857CLT1 |
LESHAN RADIO COMPANY, LTD.
LBC856ALT1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V(BR)CEO
–65
–45
–30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage
(IC = –10
μ
A, VEB = 0)
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V(BR)CES
–80
–50
–30
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(IC = –10 A)
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V(BR)CBO
–80
–50
–30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(IE = –1.0 A)
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V(BR)EBO
–5.0
–5.0
–5.0
–
–
–
–
–
–
V
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current
(VCB = –30 V, TA = 150
°
C)
ON CHARACTERISTICS
ICBO
–
–
–
–
–15
–4.0
nA
μ
A
DC Current Gain
(IC = –10
μ
A, VCE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B, LBC857B, LBC858B,LBC859B
LBC857C, LBC858C,LBC859C
(IC = –2.0 mA, VCE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B, LBC857B, LBC858B, LBC859B
LBC857C, LBC858C, LBC859C
hFE
–
–
–
125
220
420
90
150
270
180
290
520
–
–
–
250
475
800
–
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VCE(sat)
–
–
–
–
–0.3
–0.65
V
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat)
–
–
–0.7
–0.9
–
–
V
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
–0.6
–
–
–
–0.75
–0.82
V
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
fT
100
–
–
MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Cob
–
–
4.5
pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 k
, f = 1.0 kHz, BW = 200 Hz)
LBC856, LBC857, LBC858 Series
LBC859 Series
NF
–
–
–
–
10
4.0
dB
LBC856ALT1S-3/7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC857CLT1G | General Purpose Transistors PNP Silicon |
| LBC858 | General Purpose Transistors PNP Silicon |
| LBC858ALT1 | General Purpose Transistors PNP Silicon |
| LBC858ALT1G | General Purpose Transistors PNP Silicon |
| LBC858BLT1 | General Purpose Transistors PNP Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC857CLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC858 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC858ALT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC858ALT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC858AWT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
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