參數資料
型號: LBC856BLT1G
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors PNP Silicon
中文描述: 通用硅晶體管進步黨
文件頁數: 4/7頁
文件大小: 153K
代理商: LBC856BLT1G
LESHAN RADIO COMPANY, LTD.
LBC857/ LBC858
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
V
CE
= –10 V
T
A
= 25°C
2.0
1.5
1.0
0.7
0.5
0.3
0.2
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= –10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25°C
V
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
θ
V
1.0
1.2
1.6
2.0
2.4
2.8
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
C
,
I
C
= –200 mA
–55°C to +125°C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.2
–1.0
–10
–100
–0.02
–0.1
–1.0
–10
–20
–2.0
–1.6
–1.2
–0.8
–0.4
0
I
C
=
–10 mA
I
C
= –100 mA
I
C
= –
20 mA
I
C
= –50 mA
h
F
,
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
T
A
=25°C
V
CE
=–10V
T
A
= 25°C
f
T
,
P
V
C
ob
C
ib
400
300
200
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20
–30
–40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
LBC856ALT1 Series
LBC856ALT1S-4/7
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