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參數(shù)資料
| 型號： | LBC848CPDW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| 中文描述： | 雙通用晶體管npn型/進步黨對偶（免費） |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 254K |
| 代理商： | LBC848CPDW1T1 |
LESHAN RADIO COMPANY, LTD.
TYPICAL PNP CHARACTERISTICS —
LB
C846
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1
-1.0
-10
-200
-0.2
0.2
0.5
-0.2
-1.0
-10
-200
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = -5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02
-1.0
-10
0
-20
-0.1
-0.4
-0.8
V
V
θ
°
-0.2
-2.0
-10
-200
-1.0
TJ = 25
°
C
IC =
-10 mA
h
V
VCE = -5.0 V
TA = 25
°
C
0
-0.5
-2.0
-5.0
-20
-50
-100
-0.05
-0.2
-0.5
-2.0
-5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5
-5.0
-20
-50
-100
-55
°
C to 125
°
C
θ
VB for VBE
-2.0 -5.0
-20
-50 -100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
-0.1 -0.2
-1.0
-50
2.0
-2.0
-10
-100
100
200
500
50
20
20
10
8.0
6.0
4.0
-1.0
-10
-100
VCE = -5.0 V
C
f
T
-0.5
-5.0
-20
TJ = 25
°
C
Cob
Cib
-50 mA
-200 mA
L
BC846BPDW1T1,
L
BC847BPDW1T1 Series,
L
BC848BPDW1T1 Series
LBC846BP–5/9
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相關(guān)代理商/技術(shù)參數(shù) |
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| LBC848CPDW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors |
| LBC848CWT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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| LBC849B | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC849BLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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