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參數(shù)資料
| 型號(hào)： | LBC848BPDW1T1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| 中文描述： | 雙通用晶體管npn型/進(jìn)步黨對(duì)偶（免費(fèi)） |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 254K |
| 代理商： | LBC848BPDW1T1 |
LESHAN RADIO COMPANY, LTD.
L
BC846BPDW1T1,
L
BC847BPDW1T1 Series,
L
BC848BPDW1T1 Series
ELECTRICAL CHARACTERISTICS (NPN)
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LB
C846 Series
LB
C847 Series
LB
C848 Series
V(BR)CEO
65
45
30
—
—
—
—
—
—
V
Collector–Emitter Breakdown Voltage
(IC = 10
μ
A, VEB = 0)
LB
C846 Series
LB
C847B Only
LB
C848 Series
V(BR)CES
80
50
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = 10 A)
LB
C846 Series
LB
C847 Series
LB
C848 Series
V(BR)CBO
80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = 1.0 A)
LB
C846 Series
LB
C847 Series
LB
C848 Series
V(BR)EBO
6.0
6.0
5.0
—
—
—
—
—
—
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150
°
C)
ICBO
—
—
—
—
15
5.0
nA
μ
A
ON CHARACTERISTICS
DC Current Gain
(IC = 10
μ
A, VCE = 5.0 V)
LB
C846B,
L
BC847B,
L
BC848B
LB
C847C,
L
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
LB
C846B,
L
BC847B,
L
BC848B
LB
C847C,
L
BC848C
hFE
—
—
200
420
150
270
290
520
—
—
475
800
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
—
—
—
—
0.25
0.6
V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
—
—
0.7
0.9
—
—
V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
580
—
660
—
700
770
mV
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
—
—
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k
, f = 1.0 kHz, BW = 200 Hz)
Cobo
NF
—
—
4.5
pF
—
—
10
dB
LBC846BP–2/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC848CPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC846 | General Purpose Transistors NPN Silicon |
| LBC847A | General Purpose Transistors NPN Silicon |
| LBC847ALT1 | General Purpose Transistors NPN Silicon |
| LBC847ALT1G | General Purpose Transistors NPN Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC848BPDW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors |
| LBC848BWT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848C | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848CDW1T1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN Duals |
| LBC848CDW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN Duals |
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