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參數(shù)資料
| 型號(hào)： | LBC847CWT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | LBC847CWT1 |
LESHAN RADIO COMPANY, LTD.
K5–3/5
LBC846AWT1, BWT1 LBC847AWT1, BWT1, CWT1 LBC848AWT1, BWT1, CWT1
LBC847/LBC848
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
V
CE
= 10V
T
A
= 25°C
T
A
= 25°C
V
CE
= 5V
T
A
= 25°C
V
CE(sat)
@ I
C
/I
B
= 10
V
θ
V
h
F
V
f
T
,
P
V
I
C
=
10 mA
100mA
20mA
200mA
T
A
= 25°C
θ
VB
for V
BE
–55°C to 125°C
C
ob
C
ib
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
1.0
0.8
0.6
0.4
0.2
0
400
300
200
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
0
0.02
0.4 0.6 0.81.0
2.0
4.0 6.0 8.010
20
40
0.5 0.7 1.0
2.0
3.0
5.0 7.010
20
30
50
0.1 0.2
1.0
10
100
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
20
50mA
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PDF描述 |
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| LBC848AWT1 | General Purpose Transistors NPN Silicon |
| LBC848BWT1 | General Purpose Transistors NPN Silicon |
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| LBC846BDW1T1 | Dual General Purpose Transistors NPN Duals |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC847CWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848A | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848ALT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC848ALT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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