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參數(shù)資料
| 型號(hào)： | LBC847 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 141K |
| 代理商： | LBC847 |
LESHAN RADIO COMPANY, LTD.
LBC846ALT1S-3/6
LBC846ALT1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
LB
C846A,B
(IC = 10 mA)
LB
C847A,B,C,
L
BC850B,C
LB
C848A,B,C,
L
BC849B,C
V(BR)CEO
65
45
30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage
LB
C846A,B
(IC = 10
μ
A, VEB = 0)
LB
C847A,B,C,
L
BC850B,C
LB
C848A,B,C,
L
BC849B,C
V(BR)CES
80
50
30
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(IC = 10 A)
LB
C846A,B
LB
C847A,B,C,
L
BC850B,C
LB
C848A,B,C,
L
BC849B,C
V(BR)CBO
80
50
30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(IE = 1.0 A)
LB
C846A,B
LB
C847A,B,C,
L
BC850B,C
LB
C848A,B,C,
L
BC849B,C
V(BR)EBO
6.0
6.0
5.0
–
–
–
–
–
–
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150
°
C)
ICBO
–
–
–
–
15
5.0
nA
μ
A
ON CHARACTERISTICS
DC Current Gain
(IC = 10
μ
A, VCE = 5.0 V)
LB
C846A,
L
BC847A,
L
BC848A
LB
C846B,
L
BC847B,
L
BC848B
LB
C847C,
L
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
LB
C846A,
L
BC847A,
L
BC848A
LB
C846B,
L
BC847B,
L
BC848B,
LB
C849B,
L
BC850B
LB
C847C,
L
BC848C,
L
BC849C,
L
BC850C
hFE
–
–
–
110
200
420
90
150
270
180
290
520
–
–
–
220
450
800
–
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
–
–
–
–
0.25
0.6
V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
–
–
0.7
0.9
–
–
V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
580
–
660
–
700
770
mV
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
–
–
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
(VCE = 5.0 Vdc, RS = 2.0 k
LB
C846A,B,
L
BC847A,B,C,
L
BC848A,B,C
f = 1.0 kHz, BW = 200 Hz)
LB
C849B,C,
L
BC850B,C
Cobo
NF
–
–
4.5
pF
–
–
–
–
10
4.0
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC847A | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847ALT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847ALT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847ALT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847AWT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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