參數(shù)資料
型號(hào): LAE4002S
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 48K
代理商: LAE4002S
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LAE4002S
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
case
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
MAX.
UNIT
R
th j-c
thermal resistance from junction to case
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
0.3
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
CB
= 35 V; R
BE
= 220
I
C
= 0 V; V
EB
= 1.5 V
I
E
= I
C
= 0; V
CB
= 18 V; V
EB
= 1.5 V;
f = 1 MHz
I
E
= I
C
= 0; V
CE
= 18 V; V
EB
= 1.5 V;
f = 1 MHz
I
E
= I
C
= 0; V
EB
= 1.0 V; V
CB
= 18 V;
f = 1 MHz
I
C
= 30 mA; V
CE
= 18 V; f = 2 GHz
I
C
= 30 mA; V
CE
= 18 V; f = 4 GHz
I
C
= 30 mA; V
CE
= 18 V; f = 2 GHz
I
C
= 30 mA; V
CE
= 18 V; f = 3 GHz
V
CE
= 5 V; I
C
= 30 mA
100
150
500
50
nA
μ
A
μ
A
nA
pF
I
CER
I
EBO
C
cb
collector cut-off current
emitter cut-off current
collector-base capacitance
C
ce
collector-base capacitance
0.55
pF
C
eb
collector-base capacitance
1.8
pF
s
fe
2
forward power gain
15
8.8
2.8
14
11
150
dB
dB
dB
dB
G
AM
maximum available gain
h
FE
DC current gain
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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