參數(shù)資料
型號: LAE4001R
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 2/8頁
文件大?。?/td> 48K
代理商: LAE4001R
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LAE4001R
FEATURES
Self-aligned process entirely ion implanted and gold
sandwich metallization
Optimum temperature profile
Excellent performance and reliability.
APPLICATIONS
Common emitter class A linear power amplifiers up
to 4 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT100 metal ceramic package with emitter connected
to the metallized lid. A miniature ceramic encapsulation is
used for compatibility with stripline microwave circuits.
PINNING - SOT100
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
Fig.1 Simplified outline and symbol.
Marking code:
R8.
handbook, halfpage
MAM312
e
c
b
1
4
2
3
QUICK REFERENCE DATA
RF performance up to T
case
= 25
°
C in a common emitter class A circuit.
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(mW)
G
po
(dB)
Z
i
(
)
Z
L
(
)
CW linear amplifier
4
15
25
>85
>8.5
typ.7 + j22
typ. 10 + j38
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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