參數(shù)資料
型號(hào)： LA9605W
廠商： Sanyo Electric Co.,Ltd.
英文描述： MD Player RF and Matrix Signal-Processing IC
中文描述： MD播放機(jī)和矩陣射頻信號(hào)處理集成電路
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 171K
代理商： LA9605W
No. 5980-2/11
LA9605W
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
7
V
Allowable power dissipation
Pd max
When mounted on a 114.3
×
76.1
×
1.6-mm single-sided
glass-epoxy printed circuit board. Ta
≤
75 °C
350
mW
Operating temperature
Topr
–25 to +75
°C
Storage temperature
Tstg
–40 to +150
°C
Specifications
Maximum Ratings
at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Recommended supply voltage
V
CC
V
CC
op
5
V
Operating supply voltage range
2.7 to 5.5
V
Operating Conditions
at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Current drain
I
CC
18
32
46
mA
[RF AMP GROVE]
Gain
VG
RFMG
1 EQ
O
/I : J = V
C
27
30
33
dB
[RF AMP MO.PIT]
Offset
V
OS RFMP
1 RF
O
1 : I = J = V
C
VG
RFMP
1
EQ
O
/I : I = J
V
C
– 245
V
C
– 185
V
C
– 125
mV
Gain
15
18
21
dB
[RF AMP AL]
Offset
V
OS RFAP
1 RF
O
1 : I = J = V
C
VG
RFAP
1
EQ
O
/I : I = J = V
C
V
C
– 152
V
C
– 92
V
C
– 32
11.5
mV
Gain
5.5
8.5
dB
[RF AMP]
Output level
H
V
ORFH
1
V
ORFL
1
EQ
O
: RFI1 = V
C
+ 1 V
EQ
O
: RFI1 = V
C
– 1 V
3.5
4.1
V
L
0.9
1.5
V
[ABCD GR]
Gain
VG
ABG
1
V
OABGH
2
V
OABGL
2
ABCD/A (10 kHz) : A = B = C = D, SGC = 0.78 V
17.5
20.5
23.5
dB
Output level
H
ABCD : A = B = C = D = V
C
– 400 mV, SGC = 0.78 V
ABCD : A = B = C = D = V
C
+ 400 mV, SGC = 0.78 V
4.5
4.9
V
L
0.1
0.5
V
[ABCD PIT]
Gain
VG
ABP
1
V
G
ABP
1
ABCD/A (10 kHz) : A = B = C = D, SGC = 0.3 V
10.6
13.6
16.6
dB
Frequency characteristics
ABCD/A (10 kHz) – ABCD/A (35 kHz), SGC = 0.3 V
3.9
6.9
9.9
dB
[FOCS]
Output level
H
V
OFOH
1
V
OFOL
1
V
GFO
1
FE : B = D = V
C
+ 825 mV, A = C = V
C
, SGC = 0.3 V
FE : B = D = V
C
– 825 mV, A = C = V
C
, SGC = 0.3 V
FE/A (5 kHz) : A = –B = C = –D, SGC = 0.3 V
4.5
4.9
V
L
0.1
0.5
V
Gain
13.9
16.9
19.9
dB
Frequency characteristics
V
GFO
1
FE/A (5 kHz) – FE/A (26 kHz) : A = –B = C = –D,
SGC = 0.3 V
0.4
3.4
6.4
dB
[TE GR]
Output level
H
V
OTEGH
1
V
OTEGL
1
VG
TEG
1
V
G
TEG
1
TE : F = V
C
+ 200 mV, E = V
C
, SGC = 0.78 V
TE : F = V
C
– 200 mV, E = V
C
, SGC = 0.78 V
TE/E (5 kHz) : E = –F, SGC = 0.78 V
4.5
4.9
V
L
0.1
0.5
V
Gain
31.4
34.4
37.4
dB
Frequency characteristics
TE/E (5 kHz) – TE/E (38 kHz) : E = –F, SGC = 0.78 V
1.8
4.8
8.8
dB
[TE PIT]
Gain
VG
TEP
1
V
G
TEP
1
TE/E (5 kHz) : E = –F, SGC = 0.3 V
25.2
28.2
31.2
dB
Frequency characteristics
TE/E (5 kHz) – TE/E (38 kHz) : E = –F, SGC = 0.3 V
1.8
4.8
8.8
dB
[ADIP]
Output level
H
V
OADH
1
V
OADL
1
CAD : A = D = V
C
+ 0.4 V, B = C = V
C
CAD : A = D = V
C
– 0.4 V, B = C = V
C
1.4
1.7
2.0
V
L
3.1
3.3
3.6
V
Electrical Characteristics
at Ta = 25°C, V
CC
= 5 V
Continued on next page.
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