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參數(shù)資料
| 型號(hào)： | LA6602V |
| 元件分類： | 消費(fèi)家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PDSO24 |
| 封裝： | SSOP-24 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | LA6602V |
Features
The LA6602V is optimal as an interface IC between the
PD and servo ICs used in MD PU modules.
Eight buffer amplifier channels
On-chip low-noise high-bandwidth amplifier RF block
Package Dimension
unit: mm
3175A-SSOP24
Monolithic Linear IC
Ordering number : EN5307A
63097HA(OT) No. 5307-1/6
SANYO: SSOP24
[LA6602V]
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
I-V Amplifier for MiniDisc Drives
LA6602V
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VCC max
13.0
V
Allowable power dissipation
Pd max
Independent IC
300
mW
Operating temperature
Topr
–30 to +80
°C
Storage temperature
Tstg
–40 to +125
°C
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VCC
3.6 to 12.0
V
Operating Conditions at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Quiescent current
ICCO
See Figure 1.
5
10
20
mA
[Amplifiers A through D]
Output offset voltage
VIO
See Figure 2.
2
7
mV
Maximum output voltage
VO max
RL = 4.7 k, VIN = –1 V See Figure 3.
2.0
V
Minimum output voltage
VO min
RL = 4.7 k, VIN = +1 V See Figure 4.
–2.0
V
Gain-bandwidth product
fT
20 [dB] amp GV = 0 [dB] See Figure 4.
0.5
0.7
MHz
[Amplifiers E and F]
Output offset voltage
VIO
See Figure 2.
2
7
mV
Maximum output voltage
VO max
RL = 4.7 k, VIN = –1 V See Figure 3.
2.0
V
Minimum output voltage
VO min
RL = 4.7 k, VIN = +1 V See Figure 4.
–2.0
V
Gain-bandwidth product
fT
20 [dB] amp GV = 0 [dB] See Figure 4.
0.5
0.7
MHz
[Amplifiers I and J]
Output offset voltage
VIO
See Figure 2.
20
50
mV
Output offset voltage difference
VIO I-J
3
7
mV
Maximum output voltage
VO max
RL = 2 k, VIN = –1 V See Figure 3.
1.5
V
Minimum output voltage
VO min
RL = 2 k, VIN = +1 V See Figure 4.
–1.5
V
Gain-bandwidth product
fT
20 [dB] amp GV = 0 [dB] See Figure 4.
6
8
MHz
Operating Characteristics at Ta = 25°C, VCC /VEE = ± 2.5 V
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