參數(shù)資料
型號: LA6602V
廠商: Sanyo Electric Co.,Ltd.
元件分類: 運(yùn)算放大器
英文描述: I-V Amplifier for MiniDisc Drives
中文描述: 四放大器迷你光碟驅(qū)動器
文件頁數(shù): 1/6頁
文件大?。?/td> 88K
代理商: LA6602V
Features
The LA6602V is optimal as an interface IC between the
PD and servo ICs used in MD PU modules.
Eight buffer amplifier channels
On-chip low-noise high-bandwidth amplifier RF block
Package Dimension
unit: mm
3175A-SSOP24
Monolithic Linear IC
LA6602V
Ordering number : EN5307A
63097HA(OT) No. 5307-1/6
SANYO: SSOP24
[LA6602V]
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
I-V Amplifier for MiniDisc Drives
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
Pd max
13.0
V
Allowable power dissipation
Independent IC
300
mW
Operating temperature
Topr
–30 to +80
°C
Storage temperature
Tstg
–40 to +125
°C
Specifications
Maximum Ratings
at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
V
CC
3.6 to 12.0
V
Operating Conditions
at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Quiescent current
I
CCO
See Figure 1.
5
10
20
mA
[Amplifiers A through D]
Output offset voltage
V
IO
See Figure 2.
R
L
= 4.7 k
, V
IN
= –1 V See Figure 3.
R
L
= 4.7 k
, V
IN
= +1 V See Figure 4.
20 [dB] amp GV = 0 [dB] See Figure 4.
2
7
mV
Maximum output voltage
V
O
max
V
O
min
f
T
2.0
V
Minimum output voltage
–2.0
V
Gain-bandwidth product
0.5
0.7
MHz
[Amplifiers E and F]
Output offset voltage
V
IO
See Figure 2.
R
L
= 4.7 k
, V
IN
= –1 V See Figure 3.
R
L
= 4.7 k
, V
IN
= +1 V See Figure 4.
20 [dB] amp GV = 0 [dB] See Figure 4.
2
7
mV
Maximum output voltage
V
O
max
V
O
min
f
T
2.0
V
Minimum output voltage
–2.0
V
Gain-bandwidth product
0.5
0.7
MHz
[Amplifiers I and J]
Output offset voltage
V
IO
V
IO
I-J
V
O
max
V
O
min
f
T
See Figure 2.
20
50
mV
Output offset voltage difference
3
7
mV
Maximum output voltage
R
L
= 2 k
, V
IN
= –1 V See Figure 3.
R
L
= 2 k
, V
IN
= +1 V See Figure 4.
20 [dB] amp GV = 0 [dB] See Figure 4.
1.5
V
Minimum output voltage
–1.5
V
Gain-bandwidth product
6
8
MHz
Operating Characteristics
at Ta = 25°C, V
CC
/V
EE
= ± 2.5 V
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