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參數(shù)資料
| 型號： | L80N4LLF3 |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion |
| 中文描述： | N溝道40V的- 0.0042ohm - 80A條-的PowerFLAT區(qū)（6x5）STripFET功率MOSFET - DC轉換 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 334K |
| 代理商： | L80N4LLF3 |
Electrical characteristics
STL80N4LLF3
4/12
2
Electrical characteristics
(T
CASE
= 25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250 μA, V
GS
= 0
40
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating@125 °C
10
100
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 16V
±200
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 10 A
V
GS
= 4.5V, I
D
=10 A
0.0042
0.005
0.005
0.007
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
2530
574
29
pF
pF
pF
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
1
3
5
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 32V, I
D
= 20 A,
V
GS
= 4.5V
(see Figure 13)
21.5
6.9
8.2
28
nC
nC
nC
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