參數資料
型號: L6918D
廠商: 意法半導體
英文描述: 5 BIT PROGRAMMABLE MULTIPHASE CONTROLLER
中文描述: 5位可編程多相控制器
文件頁數: 13/35頁
文件大?。?/td> 760K
代理商: L6918D
13/35
L6918 L6918A
Figure 3. Soft Start
Forcing the master OSC/INH/FAULT pin to a voltage lower than 0.8V, the devices enter in INHIBIT mode: all
the power mosfets are turned off until this condition is removed. When this pin is freed, the OSC/INH/FAULT
pin reaches the band-gap voltage and the soft start begin as previously explained.
In INHIBIT mode the Slave device still have both OVP and UVP protection active referring the thresholds to the
incoming reference present at the VPROG_IN pin if this one is greater than 0.8V. Otherwise (VPROG_IN <
0.8V) UVP is disabled and the OVP threshold is fixed at 0.8V.
DRIVER SECTION
The integrated high-current drivers allow using different types of power MOS (also multiple MOS to reduce the
RDSON), maintaining fast switching transition.
The drivers for the high-side mosfets use BOOT pins for supply and PHASE pins for return. The drivers for the
low-side mosfets use VCCDRV pin for supply and PGND pin for return. A minimum voltage of 5V at VCCDRV
pin is required to start operations of the device. The controller embodies a sophisticated anti-shoot-through sys-
tem to minimize low side body diode conduction time so maintaining good efficiency saving the use of Schottky
diodes. The conduction time is reduced to few nanoseconds assuring that high-side and low-side mosfets are
never switched on simultaneously: when the high-side mosfet turns off, the voltage on its source begins to fall;
when the voltage reaches 2V, the low-side mosfet gate drive is applied with 30ns delay. When the low-side mos-
fet turns off, the voltage at LGATE pin is sensed. When it drops below 1V, the high-side mosfet gate drive is
applied with a delay of 30ns. If the current flowing in the inductor is negative, the source of high-side mosfet will
never drop. To allow the turning on of the low-side mosfet even in this case, a watchdog controller is enabled:
if the source of the high-side mosfet don't drop for more than 240ns, the low side mosfet is switched on so al-
lowing the negative current of the inductor to recirculate. This mechanism allows the system to regulate even if
the current is negative.
The BOOT and VCCDRV pins are separated from IC's power supply (VCC pin) as well as signal ground (SGND
pin) and power ground (PGND pin) in order to maximize the switching noise immunity.
The peak current is shown for both the upper and the lower driver of the two phases in figure 4.A 10nF capacitive
load has been used.
For the upper drivers, the source current is 1.9A while the sink current is 1.5A with V
BOOT
-V
PHASE
= 12V; sim-
ilarly, for the lower drivers, the source current is 2.4A while the sink current is 2A with V
CCDR
= 12V.
LS
VPROG_OUT
SLAVE_OK
V
CC
PGOOD
SYNC_OUT
CH1=PGOOD; CH2=LGATEx; CH3=VPROG_OUT; CH4=SLAVE_OK
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