2004 IXYS All rights reserved
2 - 2
DGS 4-025A
DGSK 8-025A
DGS 3-025AS
4
IXYS reserves the right to change limits, test conditions and dimensions
0,0
0,5
1,0
1,5
V
F
2,0
0,001
0,01
0,1
1
10
0,00001
0,0001
0,001
0,01
0,1
1
10
0,01
0,1
1
10
t
s
K/W
0,1
1
10
100
V
R
1000
1
10
100
C
J
I
F
A
V
pF
V
Z
thJC
T
VJ
= 125°C
Single Pulse
T
VJ
=
125°C
25°C
DGS3-025AS
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
by majority + minority carriers
V
(I
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
, I
, Q
)
delayed saturation leads to V
FR
Rectifier Diode
by majority carriers only
V
(I
), see Fig. 1
reverse current charges
junction capacity C
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
Outlines
TO-252
1 Anode
2 NC
3 Anode
4 Cathode
Dim. Millimeter
Min.
A
2.19
A1
0.89
A2
b
0.64
b1
0.76
b2
5.21
c
0.46
c1
0.46
D
5.97
D1
4.32
E
6.35
E1
4.32
e
e1
H
9.40 10.42
L
0.51
L1
0.64
L2
0.89
L3
2.54
Inches
Min.
0.086
0.035
0
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
Max.
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0
2.28 BSC
4.57 BSC
0.410
0.040
0.040
0.050
0.115
1.02
1.02
1.27
2.92
Outline TO-220
Dim.
Millimeter
Min.
12.70
14.73
9.91
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.38
2.29
Inches
Min.
0.500
0.580
0.390
0.139
0.230
0.100
0.045
0.110
0.025
0.100
0.170
0.045
0.015
0.090
Max.
13.97
16.00
10.66
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
Max.
0.550
0.630
0.420
0.161
0.270
0.125
0.065
0.230
0.040
BSC
0.190
0.055
0.022
0.110
A
B
C
D
E
F
G
H
J
K
M
N
Q
R