參數(shù)資料
型號(hào)： L6716TR
廠商： STMICROELECTRONICS
元件分類： 穩(wěn)壓器
英文描述： DUAL SWITCHING CONTROLLER, 225 kHz SWITCHING FREQ-MAX, QCC48
封裝： 7 X 7 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFQFP-48
文件頁數(shù)： 7/57頁
文件大小： 829K
代理商： L6716TR
L6716
Electrical characteristics
Doc ID 14521 Rev 3
15/57
IVID
VID pull-up current
VIDx to SGND
0
μA
VIDIH
VID thresholds
Input low
0.35
V
VIDIL
Input high
0.8
V
PSI
PSI thresholds
Input low
0.4
V
Input high
0.8
PSI pull-up current
PSI to SGND
0
μA
Error amplifier
A0
EA DC gain
130
dB
SR
EA slew-rate
COMP = 10 pF to SGND
25
V/
μs
Differential current sensing and offset
ICSx+
Bias current
0
μA
VOCSET
OCSET pin voltage
1.105
1.245
1.385
mV
KIDROOP
Droop current deviation from
nominal value
Rg = 1 k
Ω;
1-PHASE, IDROOP = 25 μA;
2-PHASE, IDROOP = 50 μA;
3-PHASE, IDROOP = 75 μA;
4-PHASE, IDROOP = 100 μA;
-3
-
+3
μA
KIOFFSET
Offset current accuracy
IOFFSET = 50 μA to 250 μA-5
-
5
%
IOFFSET
OFFSET current range
0
250
μA
VOFFSET
OFFSET pin bias
IOFFSET = 0 to 250 μA1.240
V
Gate drivers
tRISE UGATE High side rise time
BOOTx-PHASEx = 12 V;
CUGATEx to PHASEx = 3.3 nF
20
ns
IUGATEx
High side source current
BOOTx-PHASEx = 12 V
1.5
A
RUGATEx
High side sink resistance
BOOTx-PHASEx = 12 V
2
Ω
tRISE LGATE
Low side rise time
VCCDR = 12 V;
CLGATEx to PGNDx = 5.6 nF
25
ns
ILGATEx
Low side source current
VCCDR = 12 V
2
A
RLGATEx
Low side sink resistance
VCCDR = 12 V
1
Ω
PWM output
PWM4
Output high
I = 1 mA
3
V
Output low
I = -1 mA
0.2
V
IPWM4
PWM4 pull-up current
Before SSEND = 1; PWM4 to SGND
10
μA
Table 5.
Electrical characteristics (continued)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
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