參數(shù)資料
型號: L652DU12RE
廠商: Advanced Micro Devices, Inc.
英文描述: 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
中文描述: 128兆位(16米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存與VersatileIO⑩控制記憶
文件頁數(shù): 37/54頁
文件大?。?/td> 492K
代理商: L652DU12RE
May 5, 2006 24961A5
Am29LV652D
35
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +5.5 V
A9
,
OE#, ACC, and
RESET#
(Note 2). . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
All others (Note 1). . . . . . . . . –0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During
voltage transitions, input or I/Os may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. Maximum DC voltage
on input or I/Os is V
CC
+0.5 V. See
Figure 7, on page 35
.
During voltage transitions, input or I/Os may overshoot to
V
CC
+2.0 V for periods up to 20 ns. See
Figure 8, on
page 35
.
2. Minimum DC input voltage on A9, OE#, ACC, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# may overshoot V
SS
to –2.0 V for
periods of up to 20 ns. See
Figure 7, on page 35
.
Maximum DC input voltage on A9, OE#, ACC, and
RESET# is +12.5 V which may overshoot to +14.0 V for
periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (T
A
). . . . . . . . . .–40°C to +85°C
Extended (E) Devices
Ambient Temperature (T
A
). . . . . . . . .–55°C to +125°C
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.0 V–3.6 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.0 V–5.0 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
Figure 7.
Maximum Negative
Overshoot Waveform
20 ns
20 ns
V
+2.0 V
V
+0.5 V
20 ns
2.0 V
Figure 8.
Overshoot Waveform
Maximum Positive
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L652DU12RF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L652DU12RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L652DU12RK 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L652DU90RF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
L652DU90RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control