參數(shù)資料
型號: L640MU12RI
廠商: Advanced Micro Devices, Inc.
元件分類: DRAM
英文描述: 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
中文描述: 64Mb(4個M x 16位)的MirrorBit,3V,統(tǒng)一扇區(qū)閃存并有Versatile輸入/輸出控制
文件頁數(shù): 24/59頁
文件大小: 699K
代理商: L640MU12RI
22
Am29LV640MU
25301C5 February1,2007
D A T A S H E E T
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
(00h not supported)
2Ah
2Bh
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
007Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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參數(shù)描述
L640MU12VI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640MU90NI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640MU90RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L641 制造商:CRYDOM 制造商全稱:Crydom Inc., 功能描述:Power Modules
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