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參數(shù)資料
| 型號(hào)： | L640GU73VI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 64兆位（4個(gè)M x 16位）的CMOS 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 3/55頁 |
| 文件大?。?/td> | 719K |
| 代理商： | L640GU73VI |
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ADVANCE INFORMATION
This document contains information on a product under development at Advance Micro Devices. The information is
intended to help you evaluate this product. Do not design in the product without contacting the factory. AMD reserves
the right to change or discontinue work on this proposed product without notice.
Publication#
25295
Issue Date:
June 14, 2005
Rev:
A
Amendment/
+3
Am29LV641G
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Single power supply operation
— 2.7 to 3.6 volt read, erase, and program operations
■
SecSi
(Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number
— May be programmed and locked at the factory or by
the customer
— Accessible through a command sequence
■
VersatileI/O
control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin
■
Manufactured on 0.18 μm process technology
■
Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash standard
■
Package options
— 48-pin TSOP and Reverse TSOP (LV641GH/L only)
— 63-ball Fine-Pitch BGA (LV640GU only)
— 64-ball Fortified BGA (LV640GU only)
■
Minimum 1 million erase cycle guarantee per sector
■
20-year data retention at 125
°
C
PERFORMANCE CHARCTERISTICS
■
High performance
— Access time ratings as fast as 55 ns
■
Ultra low power consumption (typical values at 3.0 V,
5 MHz)
— 9 mA typical active read current
— 26 mA typical erase/program current
— 200 nA typical standby mode current
■
Program and erase performance (V
HH
not applied to
the ACC input pin)
— Word program time: 7 μs typical
— Sector erase time: 0.6 s typical for each 32 Kword
sector
SOFTWARE AND HARDWARE FEATURES
■
Hardware features
—
Hardware reset input (RESET#):
resets device for
new operation
—
WP# input:
protects first or last 32 Kword sector
regardless of sector protection settings
(LV641GH/L only)
—
ACC input:
Accelerates programming time for higher
throughput during system production
■
Software features
—
Program Suspend & Resume:
read other sectors
before programming operation is completed
—
Sector Group Protection:
V
CC
-level method of
preventing program or erase operations within a
sector
—
Temporary Sector Group Unprotect:
V
ID
-level method
of changing in previously locked sectors
—
CFI (Common Flash Interface) compliant:
allows host
system to identify and accommodate multiple flash
devices
—
Erase Suspend/Erase Resume:
read/program other
sectors before an erase operation is complete
—
Data# Polling
and
toggle bits
provide erase and
programming operation status
—
Unlock Bypass Program
command reduces overall
multiple-word programming time
This product has been retired and is not recommended for designs. For new and current designs, S29GL064A supersedes Am29LV641G and is the factory-recommended migration path.
Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
相關(guān)PDF資料 |
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| L640MH01NI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640ML11PI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640ML12NI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640ML12PI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640ML90NI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L640MB10NF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| L640MB10NI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| L640MB10PF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| L640MB10PI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| L640MB10RF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
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