參數(shù)資料
型號: L6388
廠商: 意法半導體
英文描述: HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
中文描述: 高壓高端和低端驅動
文件頁數(shù): 6/11頁
文件大?。?/td> 562K
代理商: L6388
L6388
6/11
has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125 Ohm). At low fre-
quency this drop can be neglected. Anyway increasing the frequency it must be taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
where Q
gate
is the gate charge of the external power MOS, R
dson
is the on resistance of the bootstrap DMOS,
and T
charge
is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about
1V, if the T
charge
is 5
μ
s. In fact:
V
drop
has to be taken into account when the voltage drop on C
BOOT
is calculated: if this drop is too high, or the
circuit topology doesn't allow a sufficient charging time, an external diode can be used.
Figure 8. Bootstrap Driver.
V
drop
I
ch
e
arg
R
dson
V
drop
Q
T
ch
e
arg
-------------------
R
dson
=
=
V
drop
5
μ
s
--------------
125
0.8V
=
TO LOAD
H.V.
HVG
a
b
LVG
HVG
LVG
C
BOOT
TO LOAD
H.V.
C
BOOT
D
BOOT
V
BOOT
V
S
V
S
V
OUT
V
BOOT
V
OUT
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