參數(shù)資料
型號(hào): L6376PD
廠商: 意法半導(dǎo)體
英文描述: 0.5A HIGH-SIDE DRIVER QUAD INTELLIGENT POWER SWITCH
中文描述: 0.5A的高邊驅(qū)動(dòng)器四智能功率開關(guān)
文件頁(yè)數(shù): 6/12頁(yè)
文件大小: 123K
代理商: L6376PD
THERMAL CHARACTERISTICS
R
th j-pins
DIP16+2+2
. The thermal resistance is re-
ferred to the thermal path from the dissipat-
ing region on the top surface of the silicon
chip, to the points along the four central pins
of the package, at a distance of 1.5 mm
away from the stand-offs.
R
th j-amb1
If a dissipating surface, thick at least 35
μ
m,
and with a surface similar or bigger than the
one shown, is created making use of the
printed circuit.
Such heatsinking surface is considered on
the bottom side of an horizontal PCB (worst
case).
R
th j-amb2
If the power dissipating pins (the four central
ones), as well as the others, have a mini-
Figure 1:
PrintedHeatsink
mum thermal connection with the external
world (very thin strips only) so that the dissi-
pation takes place through still air and
throughthe PCB itself.
It is the same situation of point above, with-
out any heatsinking surface created on pur-
pose on the board.
Additional data on the PowerDip and the
PowerSO20 package can be found in:
Application Note AN467:
Thermal Characteristics of the PowerDip
20,24 PackagesSolderedon 1,2,3 oz.
CopperPCB
Application Note AN668:
A New High Power IC Surface Mount Pack-
age: PowerSO20 Power IC Packaging from
Insertionto SurfaceMounting.
THERMAL DATA
Symbol
Parameter
DIP16+2+2
PowerSO20
Unit
R
th j-pin
Thermal Resistance, Junction to Pin
12
°
C/W
R
th j-amb1
Thermal Resistance, Junction to Ambient
(see Thermal Characteristics)
40
°
C/W
R
th j-amb2
Thermal Resistance, Junction to Ambient (see Thermal
Characteristics)
50
°
C/W
R
th j-case
Thermal Residance Junction-case
1.5
°
C/W
L6376
6/12
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