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參數(shù)資料
| 型號(hào)： | L608 |
| 廠商： | IXYS Corporation |
| 英文描述： | Chopper with Trench Power MOSFET and Schottky Diode |
| 中文描述： | 菜刀與海溝功率MOSFET和肖特基二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | L608 |
1 - 2
2004 IXYS All rights reserved
FMD 80-0045PS
4
IXYS reserves the right to change limits, test conditions and dimensions.
I
D25
V
DSS
R
DSon (typ.)
= 3.8 m
= 100 A
= 55 V
Chopper with
Trench Power MOSFET
and Schottky Diode
in ISOPLUS i4-PAC
TM
1
5
Features
trench MOSFET
- very low on state resistance R
DSon
- fast switching
Schottky diode
- low forward voltage
- extremely fast switching
- blocking capability optimized for
elevated temperature
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
automotive
- choppers - replacing series resistors
for DC drives, heating etc.
- control of SR drives
- DC-DC converters
- electronic switches -replacing relays
and fuses
power supplies
- DC-DC converters
- solar inverters
battery supplied systems
- choppers for drives in hand held tools
- battery chargers
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
MOSFET
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
55
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
150
110
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
3.8
4.9 m
V
GSth
V
DS
= 20 V;
I
D
= 1 mA
2
4
V
I
DSS
V
DS
= 55V;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1
μA
mA
0.1
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
0.2
μA
Q
g
Q
gs
Q
gd
86
18
25
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
25
50
70
40
ns
ns
ns
ns
R
thJC
R
thJH
1 K/W
K/W
with heatsink compound
1.5
V
GS
= 10 V; V
DS
= 44 V; I
D
= 25 A
V
GS
= 10 V; V
= 30 V;
I
D
G
= 10
3
4
1
2
Preliminary data
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