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參數(shù)資料
| 型號： | L5970D |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | L5970D |
7/11
L5970AD
The turn on of the power element, or better, the rise time of the current at turn on, is a very critical param-
eter to compromise.
At a first approach, it looks like the faster it is the rise time, the lower are the turn on losses.
But there is a limit introduced by the recovery time of the recirculation diode.
In fact when the current of the power element equals the inductor current, the diode turns off and the drain
of the power is free to go high. But during its recovery time, the diode can be considered as an high value
capacitor and this produces a very high peak current, responsible of many problems:
Spikes on the device supply voltage that cause oscillations (and thus noise) due to the board parasitics.
Turn on overcurrent causing a decrease of the efficiency and system reliability.
Big EMI problems.
Shorter freewheeling diode life.
The fall time of the current during the turn off is also critical. In fact it produces voltage spikes (due to the
parasitics elements of the board) that increase the voltage drop across the PDMOS.
In order to minimize all these problems, a new topology of driving circuit has been used and its block dia-
gram is shown in fig. 8.
The basic idea is to change the current levels used to turn on and off the power switch, according with the
PDMOS status and with the gate clamp status.
This circuitry allow to turn off and on quickly the power switch and to manage the above question related
to the freewheeling diode recovery time problem. The gate clamp is necessary to avoid that Vgs of the
internal switch goes higher than Vgsmax. The ON/OFF Control block avoids any cross conduction be-
tween the supply line and ground.
Figure 8. Driving Circuitry
3.7 INHIBIT FUNCTION
The inhibit feature allows to put in stand-by mode the device. With INH pin higher than 2.2V the device is dis-
abled and the power consumption is reduced to less than 100
μ
A. With INH pin lower than 0.8V, the device is
enabled. If the INH pin is left floating, an internal pull up ensures that the voltage at the pin reaches the inhibit
threshold and the device is disabled. The pin is also Vcc compatible.
Vgsmax
GATE
STOP
DRIVE
DRAIN
OFF
ON
PDMOS
VOUT
DRAIN
VCC
I
LOAD
C
ESR
D00IN1133
I
OFF
I
ON
ON/OFF
CONTROL
CLAMP
L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L5970D_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Up to 1A step down switching regulator |
| L5970D_0710 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Up to 1A step down switching regulator |
| L5970D013 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:UP TO 1A STEP DOWN SWITCHING REGULATOR |
| L5970D013TR | 功能描述:直流/直流開關(guān)調(diào)節(jié)器 1.2 to 35V Step-Down RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5 |
| L5971 | 功能描述:直流/直流開關(guān)轉(zhuǎn)換器 1.26 to 20V Step-Dwn RoHS:否 制造商:STMicroelectronics 最大輸入電壓:4.5 V 開關(guān)頻率:1.5 MHz 輸出電壓:4.6 V 輸出電流:250 mA 輸出端數(shù)量:2 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT |
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