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參數(shù)資料
| 型號(hào)： | L507 |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFRED Epitaxial Diode with soft recovery |
| 中文描述： | HiPerFRED外延與軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | L507 |
2003 IXYS All rights reserved
1 - 2
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
●
International standard package
miniBLOC
●
Isolation voltage 2500 V~
●
UL registered E 72873
●
2 independent FRED in 1 package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low I
-values
●
Soft recovery behaviour
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
miniBLOC, SOT-227 B
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
μ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
D4
I
FAV
V
RRM
= 400 V
t
rr
= 30 ns
= 2x 100 A
V
RSM
V
V
RRM
V
Type
400
400
DSEP 2x 101-04A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
100
100
A
A
T
C
= 60°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 4 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
1000
A
2
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
0.4
A
-40...+150
°C
°C
°C
150
-40...+150
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
200
W
2500
V~
M
d
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
①
V
R
= V
RRM
; T
VJ
= 25°C
1
4
mA
mA
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
V
F
②
I
F
= 100 A;
1.24
1.54
V
V
R
thJC
R
thCH
t
rr
0.6
K/W
K/W
with heatsink compound
0.1
I
F
= 1 A; -di/dt = 400 A/
μ
s;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/
μ
s
T
VJ
= 100°C
30
ns
I
RM
5.5
6.8
A
DSEP 2x 101-04A
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