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參數(shù)資料
| 型號： | L486 |
| 廠商： | IXYS Corporation |
| 英文描述： | IGBT Modules Sixpack, H Bridge |
| 中文描述： | IGBT模塊Sixpack，H橋 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 144K |
| 代理商： | L486 |
2004 IXYS All rights reserved
4 - 4
MWI 100-12 E8
MKI 100-12 E8
4
IXYS reserves the right to change limits, test conditions and dimensions.
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CE
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Eoff
td(off)
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off
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on
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s
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on
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tr
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single pulse
diode
IGBT
Eon
MWI100-12E8
td(on)
tf
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 12
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 12
T
VJ
= 125°C
R
G
= 12
T
VJ
= 125°C
td(on)
tf
Fig. 7
Typ. turn on energy and switching
times versus collector current
Fig. 8
Typ. turn off energy and switching
times versus collector current
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
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