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參數(shù)資料
| 型號： | L468 |
| 廠商： | IXYS Corporation |
| 英文描述： | Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM |
| 中文描述： | 雙HiPerFREDTM外延二極管ISOPLUS i4 - PACTM |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 45K |
| 代理商： | L468 |
2001 IXYS All rights reserved
1 - 2
V
RRM
I
F(AV)M
= 55 A
t
rr
= 220 ns
= 2400 V
Dual HiPerFRED
TM
Epitaxial Diode
in ISOPLUS i4-PAC
TM
Advanced Technical Information
DSEE 55-24N1F
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
1
5
Features
HiPerFRED
TM
Epitaxial Diodes
- fast and soft reverse recovery –
low switching losses
- avalanche rated
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- enlarged creepage between pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
rectifiers
- high frequency rectifiers, output
rectifiers of switched mode power
supplies
- mains rectifiers with minimized
emission of disturbances
diodes in snubber networks
high voltage diodes using the series
connection in the component
Rectifier Bridge
Symbol
Conditions
Maximum Ratings
V
RRM
c
V
RRM
2400
1200
V
V
I
FAV
I
F(AV)M
I
FSM
T
C
= 90°C; sine 180°
T
C
= 90°C; d = 0.5 rectangular
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
53
55
A
A
A
500
E
AS
I
AS
= 16 A; L
AS
= 180 μH; T
C
= 25°C; non repetitive
28
mJ
P
tot
T
C
= 25°C
(per diode)
200
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 40 A; T
VJ
= 25°C
T
VJ
= 125°C
2.0
1.5
2.5
V
V
I
R
V
R
= V
;
T
VJ
= 25°C
T
VJ
= 125°C
1
mA
mA
1
I
RM
t
rr
I
F
= 75 A; di
F
/dt = -750 A/μs; T
VJ
= 125°C
V
R
= 600 V
79
220
A
ns
R
thJC
(per diode)
0.63 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
c
Diodes connected in series
3
1
1
3
5
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