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| 型號： | L320ML11PF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（2米× 16位/ 4米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一閃存部門與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 52/59頁 |
| 文件大?。?/td> | 657K |
| 代理商： | L320ML11PF |
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50
Am29LV320MH/L
26517B4 January31,2007
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the
“Erase And Programming Performance”
section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
≠
V
CC.
7. When using the program suspend/resume feature, if the suspend command is issued within t
POLL
, t
POLL
must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after t
POLL
, t
POLL
is not required again prior to
reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
7.5
μs
Per Word
Typ
15
μs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
6.25
μs
Per Word
Typ
12.5
μs
Single Word/Byte Program
Operation (Note 2, 5)
Byte
Typ
60
μs
Word
60
Accelerated Single Word/Byte
Programming Operation (Note 2)
Byte
Typ
54
μs
Word
54
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2, 5)
Typ
0.5
sec
t
RH
RESET High Time Before Write (Note 1)
Min
50
ns
t
POLL
Program Valid before Status Polling (Note 7)
Max
4
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L320ML11PI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12NF | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12NI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12PF | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12PI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L320ML11PI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12NF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12NI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12PF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L320ML12PI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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