參數(shù)資料
型號： L320MH11NI
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 32兆位（2米× 16位/ 4米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一閃存部門與VersatileI /輸出⑩控制
文件頁數(shù)： 6/59頁
文件大?。?/td> 657K
代理商： L320MH11NI
4
Am29LV320MH/L
26517B4 January31,2007
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations..................................................... 10
VersatileIO
(V
IO
) Control .....................................................10
Requirements for Reading Array Data ...................................11
Page Mode Read ............................................................................11
Writing Commands/Command Sequences ............................11
Write Buffer .....................................................................................11
Accelerated Program Operation ......................................................11
Autoselect Functions .......................................................................11
Automatic Sleep Mode ...........................................................12
RESET#: Hardware Reset Pin ...............................................12
Output Disable Mode ..............................................................12
Table 2. Sector Address Table........................................................ 13
Table 3. Autoselect Codes, (High Voltage Method) ....................... 15
Sector Group Protection and Unprotection .............................16
Table 4. Sector Group Protection/Unprotection AddressTable ..... 16
Temporary Sector Group Unprotect .......................................17
Figure 1. Temporary Sector Group UnprotectOperation ................17
Figure 2. In-System Sector Group Protect/UnprotectAlgorithms ...18
Secured Silicon Sector Flash MemoryRegion .......................19
Table 5. Secured Silicon Sector Contents...................................... 19
Figure 3. Secured Silicon Sector Protect Verify ..............................20
Hardware Data Protection ......................................................20
Low VCC Write Inhibit .....................................................................20
Write Pulse “Glitch” Protection ........................................................20
Logical Inhibit ..................................................................................20
Power-Up Write Inhibit ....................................................................20
Common Flash Memory Interface (CFI). . . . . . . 20
Table 6. CFI Query Identification String ..........................................21
Table 7. System Interface String..................................................... 21
Table 8. Device Geometry Definition ..............................................22
Table 9. Primary Vendor-Specific Extended Query ........................23
Command Definitions . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data ................................................................24
Reset Command .....................................................................24
Autoselect Command Sequence ............................................24
Enter Secured Silicon Sector/Exit Secured Silicon Sector
CommandSequence ..............................................................25
Word/Byte Program Command Sequence .............................25
Unlock Bypass Command Sequence ..............................................25
Write Buffer Programming ...............................................................25
Accelerated Program ......................................................................26
Figure 4. Write Buffer Programming Operation ...............................27
Figure 5. Program Operation ..........................................................28
Program Suspend/Program Resume Command Sequence ...28
Figure 6. Program Suspend/Program Resume ...............................29
Chip Erase Command Sequence ...........................................29
Sector Erase Command Sequence ........................................29
Erase Suspend/Erase Resume Commands ...........................30
Figure 7. Erase Operation ..............................................................30
Table 10. Command Definitions (x16 Mode, BYTE# = V
IH
)........... 31
Table 11. Command Definitions (x8 Mode, BYTE# = V
).............. 32
Write Operation Status. . . . . . . . . . . . . . . . . . . . . 33
DQ7: Data# Polling .................................................................33
Figure 8. Data# Polling Algorithm ..................................................33
DQ6: Toggle Bit I ....................................................................34
Figure 9. Toggle Bit Algorithm ........................................................35
DQ2: Toggle Bit II ...................................................................35
Reading Toggle Bits DQ6/DQ2 ...............................................35
DQ5: Exceeded Timing Limits ................................................36
DQ3: Sector Erase Timer .......................................................36
DQ1: Write-to-Buffer Abort .....................................................36
Table 12. Write Operation Status................................................... 36
Figure 10. Maximum Negative OvershootWaveform ...................37
Figure 11. Maximum Positive OvershootWaveform .....................37
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 37
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 12. Test Setup ....................................................................39
Table 13. Test Specifications......................................................... 39
Key to Switching Waveforms. . . . . . . . . . . . . . . . 39
Figure 13. Input Waveforms and
Measurement Levels ......................................................................39
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40
Read-Only Operations ...........................................................40
Figure 14. Read Operation Timing .................................................40
Figure 15. Page Read Timings ......................................................41
Hardware Reset (RESET#) ....................................................42
Figure 16. Reset Timings ...............................................................42
Erase and Program Operations ..............................................43
Figure 17. Program Operation Timings ..........................................44
Figure 18. Accelerated Program Timing Diagram ..........................44
Figure 19. Chip/Sector Erase Operation Timings ..........................45
Figure 20. Data# Polling Timings (During Embedded Algorithms) .46
Figure 21. Toggle Bit Timings (During Embedded Algorithms) ......47
Figure 22. DQ2 vs. DQ6 .................................................................47
Temporary Sector Unprotect ..................................................48
Figure 23. Temporary Sector Group Unprotect TimingDiagram ...48
Figure 24. Sector Group Protect and Unprotect TimingDiagram ..49
Alternate CE# Controlled Erase and ProgramOperations .....50
Figure 25. Alternate CE# Controlled Write (Erase/Program)
OperationTimings ..........................................................................51
Erase And Programming Performance. . . . . . . . 52
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 52
TSOP Pin and BGA Package Capacitance . . . . . 53
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 54
TS056/TSR056—56-Pin Standard and Reverse Pinout Thin
Small Outline Package (TSOP) ..............................................54
LAA064—64-Ball Fortified Ball Grid Array (
F
BGA) 13 x 11 mm
Package ..................................................................................55
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 56
相關PDF資料
PDF描述
L320MH11PF 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH11PI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH12NF 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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相關代理商/技術參數(shù)
參數(shù)描述
L320MH11PF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH11PI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH12NF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH12NI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH12PF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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