參數資料
型號： L320MH01NI
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 32兆位（2米× 16位/ 4米× 8位）的MirrorBit⑩3.0伏特，只有統一閃存部門與VersatileI /輸出⑩控制
文件頁數： 34/59頁
文件大?。?/td> 657K
代理商： L320MH01NI
32
Am29LV320MH/L
26517B4 January31,2007
D A T A S H E E T
Table 11.
Command Definitions (x8 Mode, BYTE# = V
IL
)
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE#
pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE#
or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A20–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer
page as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
Notes:
1.
2.
3.
4.
See
Table 1
for description of bus operations.
All values are in hexadecimal.
Shaded cells indicate read cycles. All others are write cycles.
During unlock and command cycles, when lower address bits are
555 or AAA as shown in table, address bits above A11 are don’t
care.
Unless otherwise noted, address bits A20–A11 are don’t cares.
No unlock or command cycles required when device is in read
mode.
Reset command is required to return to read mode (or to
erase-suspend-read mode if previously in Erase Suspend) when
device is in autoselect mode, or if DQ5 goes high while device is
providing status information.
Fourth cycle of autoselect command sequence is a read cycle.
Data bits DQ15–DQ8 are don’t care. See
Autoselect Command
Sequence
section or more information.
Device ID must be read in three cycles.
10. If WP# protects highest address sector, data is 98h for factory
locked and 18h for not factory locked. If WP# protects lowest
5.
6.
7.
8.
9.
address sector, data is 88h for factory locked and 08h for not
factor locked.
11. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
12. Total number of cycles in command sequence is determined by
number of words written to write buffer. Maximum number of
cycles in command sequence is 21.
13. Command sequence resets device for next command after
aborted write-to-buffer operation.
14. Unlock Bypass command is required prior to Unlock Bypass
Program command.
15. Unlock Bypass Reset command is required to return to read
mode when device is in unlock bypass mode.
16. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
17. Erase Resume command is valid only during Erase Suspend
mode.
18. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
AAA
AAA
Data
RD
F0
AA
AA
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
Reset (Note 7)
Manufacturer ID
Device ID (Note 9)
Secured Silicon
Sector Factory
Protect (Note 10)
1
1
4
6
A
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Program
Write to Buffer (Note 12)
Program Buffer to Flash
Write to Buffer Abort Reset (Note 13)
Unlock Bypass
Unlock Bypass Program (Note 13)
Unlock Bypass Reset (Note 15)
Chip Erase
Sector Erase
Program/Erase Suspend (Note 16)
Program/Erase Resume (Note 17)
CFI Query (Note 18)
555
555
55
55
AAA
AAA
90
90
X00
X02
01
7E
X1C
1D
X1E
00
4
AAA
AA
555
55
AAA
90
X06
(Note 10)
Sector Group Protect Verify
(Note 11)
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
3
4
4
6
1
3
3
2
2
6
6
1
1
1
AAA
AAA
555
AAA
SA
AAA
AAA
XXX
XXX
AAA
AAA
XXX
XXX
AA
AA
AA
AA
AA
29
AA
AA
A0
90
AA
AA
B0
30
98
555
555
2AA
555
55
55
55
55
AAA
AAA
555
SA
88
90
A0
25
XXX
PA
SA
00
PD
BC
PA
PD
WBL
PD
555
555
PA
XXX
555
555
55
55
PD
00
55
55
AAA
AAA
F0
20
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
相關PDF資料
PDF描述
L320MH01PF 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH12PI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH90NF 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH90NI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320ML01NF 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
相關代理商/技術參數
參數描述
L320MH01PF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH01PI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH11NF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH11NI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L320MH11PF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*