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參數(shù)資料
| 型號： | L3100B1 |
| 廠商： | 意法半導體 |
| 英文描述： | Overvoltage and Overcurrent Protection for Telecom Line(用于電信線路的過流和過壓保護) |
| 中文描述： | 過壓和過流保護的電信線（用于電信線路的過流和過壓保護） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | L3100B1 |
ApplicationSpecific Discretes
A.S.D.
L3100B
L3100B1
DIL 8
OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
UNIDIRECTIONALFUNCTION
PROGRAMMABLEBREAKDOWNVOLTAGE
UP TO265 V
PROGRAMMABLECURRENT LIMITATION
FROM50 mA TO550 mA
HIGH SURGECURRENT CAPABILITY
I
PP
= 100A
10/1000
μ
s
FEATURES
Dedicated
protection, this device can provide both voltage
protection and current limitation with a very tight
tolerance.
Itshigh surgecurrentcapabilitymakesthe L3100B
a reliable protection device for very exposed
equipment,or when series resistorsare very low.
Thebreakdownvoltagecan beeasilyprogrammed
byusingan externalzenerdiode.
A multipleprotection mode can also be performed
when using several zener diodes, providing each
lineinterfacewith an optimizedprotectionlevel.
The current limiting function is achieved with the
use of a resistor between the gate N and the
cathode. The value of the resistor will determine
thelevelof thedesiredcurrent.
to
sensitive
telecom
equipment
DESCRIPTION
CCITTK17- K20
10/700
μ
s
5/310
10/700
μ
s
5/200
0.5/700
μ
s
0.2/310
μ
s
1.5
38
2
50
1.5
38
kV
A
kV
A
kV
A
μ
s
VDE0433
μ
s
CNET
COMPLIESWITHTHEFOLLOWINGSTANDARDS:
Gate N
Gate P
Cathode
Anode
SCHEMATIC DIAGRAM
1
2
3
4
5
6
7
8
Gate N
NC
Gate P
Cathode
Anode
Anode
Anode
Anode
CONNECTION DIAGRAM
TM: ASD is trademarks of SGS-THOMSONMicroelectronics.
September 1998 Ed : 3A
1/8
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