參數(shù)資料
型號: L2SC5658M3T5G
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Amplifier NPN Silicon Transistor
中文描述: 通用NPN硅晶體管放大器
文件頁數(shù): 1/4頁
文件大?。?/td> 78K
代理商: L2SC5658M3T5G
LESHAN RADIO COMPANY, LTD.
SOT-723
L2SC5658M3T5G
L2SC5658M3T5G-1/4
1
2
3
General Purpose Amplifier
NPN Silicon Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High h
FE
, 210460 (typical)
Low V
CE(sat)
, < 0.5 V
ESD Performance: Human Body Model;
Machine Model;
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
This is a PbFree Device
2000 V,
200 V
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
50
Vdc
Collector-Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter-Base Voltage
V
(BR)EBO
5.0
Vdc
Collector Current Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
260
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55 ~ +150
°
C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
2
EMITTER
3
COLLECTOR
1
BASE
MARKING
DIAGRAM
XX M
XX= Specific Device Code
M = Date Code
Device Package
Shipping
ORDERING INFORMATION
L2SC5658M3T5G SOT-723 3000/Tape & Reel
Version 1.0
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