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參數(shù)資料
| 型號(hào)： | L2SB1197KQLT1G |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Low Frequency Transistor PNP Silicon |
| 中文描述： | 低頻進(jìn)步黨硅晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | L2SB1197KQLT1G |
LESHAN RADIO COMPANY, LTD.
1
3
2
SOT– 23 (TO–236AB)
L2SB1197K*LT1
L2SB1197KLT1-1/3
PNP Silicon
Low Frequency Transistor
MAXIMUM RATINGS
(Ta=25
q
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
40
V
V
V
A
W
°
C
°
C
32
5
0.8
0.2
150
55 to 150
Symbol
Limits
Unit
ELECTRICAL CHARACTERISTICS
(Ta=25
q
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
120
200
12
0.5
0.5
390
0.5
30
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
20V
V
EB
=
4V
V
CE
=
3V, I
C
=
100mA
I
C
/I
B
=
0.5A/
50mA
V
CE
=
5V, I
E
=
50mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
μ
A
μ
A
V
MHz
pF
Typ.
Max.
Unit
Conditions
FEATURE
High current capacity in compact package.
I
C
=
í
0.8A.
Epitaxial planar type.
NPN complement: L2SD1781K
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB1197KQLT1
AHQ
3000/Tape&Reel
L2SB1197KQLT1G
AHQ
(Pb-Free)
3000/Tape&Reel
L2SB1197KRLT1
AHR
3000/Tape&Reel
L2SB1197KRLT1G
AHR
(Pb-Free)
3000/Tape&Reel
2
EMITTER
3
COLLECTOR
1
BASE
h
FE
values are classified as follows :
Item(*)
Q
R
h
FE
120~270
180~390
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| L2SB1197KQLT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
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| L2SB1197KRLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
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