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參數(shù)資料
| 型號： | L2SA812LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 156K |
| 代理商： | L2SA812LT1 |
L2SA812-2/5
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
Characteristic Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=-1mA)
Emitter-Base Breakdown Voltage
(I
E
=-50
μΑ
)
Collector-Base Breakdown Voltage
(I
C
=-50
μ
A)
Collector Cutoff Current
(V
CB
=-50V)
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
=
-
1mA,V
CE
=
-
6.0V)
Collector-Emitter Saturation Voltage
(I
C
=
-
100mA,I
B
=
-
10mA)
Base -Emitter On Voltage
I
E
=
-
1.0mA,V
CE
=
-
6.0V)
h
FE
120
-
560
V
CE(sat)
-
-0.18
-0.3
V
V
BE
-0.58
-0.62
-0.68
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(V
CE
=
-
6.0V,I
E
=
-
10mA)
Output Capacitance(V
CE
=
-
10V, I
E
=0, f=1.0MHz)
F
t
-
180
-
MHz
C
obo
-
4.5
-
pF
h
FE
Values are classified as followes
NOTE:
*
Q
R
S
h
FE
120~270
180~390
270~560
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
V
(BR)CEO
-50
-
-
V
V
(BR)EBO
-6
-
-
V
V
(BR)CBO
-60
-
-
V
I
CBO
-
-
-0.1
μ
A
μ
A
Emitter Cutoff Current (V
BE
=-6V)
I
EBO
-0.1
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| L2SA812QLT1 | General Purpose Transistors |
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| L2SA812RLT1 | General Purpose Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| L2SA812QLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| L2SA812QLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| L2SA812QLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors Epitaxial planar type. |
| L2SA812RLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| L2SA812RLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
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