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參數(shù)資料
| 型號： | L2SA1774RT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進步黨 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 210K |
| 代理商： | L2SA1774RT1 |
!
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0.2
C
m
50
20
10
5
2
1
0.5
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
=
6V
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Ta=100
C
25
C
40
C
Fig.2 Grounded emitter output
characteristics (I)
0.4
4
8
1.2
0
2
6
10
0.8
1.6
2.0
3.5
μ
A
7.0
10.5
14.0
17.5
21.0
24.5
28.0
31.5
I
B
=0
Ta=25
C
35.0
C
C
m
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
Fig.3 Grounded emitter output
characteristics (II)
40
80
5
3
4
2
1
20
60
100
0
I
B
=0
Ta=25
C
C
C
m
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
50
μ
A
100
150
200
250
500
300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
0.2
0.5
1
2
5
10
20
50
100
D
F
Ta=25
C
V
CE
=
5V
3V
1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
0.2
0.5
1
2
5
10
20
50
100
D
F
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=
6V
Ta=100
C
40
C
25
C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
0.1
0.2
0.5
1
2
5
10
20
50
100
1
0.5
0.2
0.05
Ta=25
C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=
50
20
10
C
C
(
V
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
0.1
0.2
0.5
1
COLLECTOR CURRENT : I
C
(
mA)
2
5
10
20
50
100
1
0.5
0.2
0.05
l
C
/l
B
=10
Ta=100
C
25
C
40
C
C
C
V
Fig.8 Gain bandwidth product vs.
emitter current
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
EMITTER CURRENT : I
E
(
mA)
T
T
M
Ta=25
C
V
CE
=
12V
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
C
p
E
p
0.5
20
2
5
10
1
2
5
10
20
Cib
Cob
Ta=25
C
f=1MHz
I
E
=
0A
I
C
=
0A
L2SA1774*T1
-
2
/
3
LESHAN RADIO COMPANY, LTD.
L2SA1774*T1
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