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參數(shù)資料
| 型號： | L2SA1576AT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進步黨 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | L2SA1576AT1 |
L2SA1576A*T1–1/4
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
–50
V
Collector–Base Voltage
V
CBO
–60
V
Emitter–Base Voltage
V
EBO
–6.0
V
Collector Current — Continuous
I
C
–150
mAdc
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55
~
+150
°C
DEVICE MARKING
L2SA1576AQT1 =FQ L2SA1576ART1 =FR L2SA1576AST1 =FS
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 50
μ
A)
Collector–Base Breakdown Voltage
(I
C
= – 50
μ
A)
Collector Cutoff Current
(V
CB
= – 60 V)
Emitter cutoff current
(V
EB
= – 6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
V
(BR)CEO
– 50
—
—
V
V
(BR)EBO
– 6
—
—
V
V
(BR)CBO
– 60
—
—
V
I
CBO
—
—
– 0.1
μ
A
I
EBO
—
—
– 0.1
μ
A
V
CE(sat)
—
—
-0.5
V
h
FE
120
––
560
––
f
T
—
140
––
MHz
C
ob
—
4.0
5.0
pF
h
FE
values are classified as follows:
Q
120~270
R
S
hFE
180~390
270~560
1
3
2
SC-70/SOT– 323
2
EMITTER
3
COLLECTOR
1
BASE
L2SA1576A*T1
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相關代理商/技術參數(shù) |
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| L2SA1774QT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
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