參數(shù)資料
型號: L2801
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
中文描述: 硅柵增強型射頻功率LDMOS晶體管
文件頁數(shù): 2/2頁
文件大小: 42K
代理商: L2801
L2B 1 DIE ID, GM vs VG
0.1
1
10
100
0
2
4
6
8
10
12
14
Vgs in Volts
ID
GM
L2B 1 DIE CAP ACIT ANCE
0.1
1
10
100
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
L2801 P OUT VS P IN F = 1000 MHZ ; IDQ= 0.4A; VDS = 28V
6
8
10
12
14
16
18
20
22
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
P IN IN WAT T S
8.00
10.00
12.00
14.00
16.00
POUT
GAIN
Efficiency = 55%
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
L2801
L2A 1 DICE IV
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
I
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
相關(guān)PDF資料
PDF描述
L2821 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
L29C520 4 x 8-bit Multilevel Pipeline Register
L29C521PC22 4 x 8-bit Multilevel Pipeline Register
L29C521 4 x 8-bit Multilevel Pipeline Register(4 x 8位多級流水線寄存器)
L29C520JC22 Pipeline Register
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