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參數(shù)資料
| 型號： | L256ML123RF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| 中文描述： | 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價外控制 |
| 文件頁數(shù)： | 32/69頁 |
| 文件大小： | 546K |
| 代理商： | L256ML123RF |
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30
Am29LV256M
December 16, 2005
D A T A S H E E T
Table 6.
CFI Query Identification String
Table 7.
System Interface String
Addresses (x16)
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses (x16)
Data
Description
1Bh
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
0007h
Typical timeout per single byte/word write 2
N
μs
20h
0007h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0001h
Max. timeout for byte/word write 2
N
times typical
24h
0005h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
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| L256ML123RI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
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| L2572L-S16-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:WIDEBAND PLL FM DEMODULATOR |
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