參數(shù)資料
型號： L256MH113RI
廠商： Advanced Micro Devices, Inc.
英文描述： 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
中文描述： 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價外控制
文件頁數(shù)： 66/69頁
文件大?。?/td> 546K
代理商： L256MH113RI
64
Am29LV256M
December 16, 2005
D A T A S H E E T
PHYSICAL DIMENSIONS
LAC064—64-Ball Fortified Ball Grid Array
18 x 12 mm Package
3243 \ 16-038.12d
PACKAGE
LAC 064
JEDEC
N/A
18.00 mm x 12.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.40
PROFILE HEIGHT
A1
0.40
---
---
STANDOFF
A2
0.60
---
---
BODY THICKNESS
D
18.00 BSC.
BODY SIZE
E
12.00 BSC.
BODY SIZE
D1
7.00 BSC.
MATRIX FOOTPRINT
E1
7.00 BSC.
MATRIX FOOTPRINT
MD
8
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
N
φ
b
eD
64
BALL COUNT
0.50
0.60
0.70
BALL DIAMETER
1.00 BSC.
BALL PITCH - D DIRECTION
eE
1.00 BSC.
BALL PITCH - E DIRECTION
SD / SE
0.50 BSC.
SOLDER BALL PLACEMENT
NONE
DEPOPULATED SOLDER BALLS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
BOTTOM VIEW
SIDE VIEW
TOP VIEW
2X
2X
C
0.20
C
0.20
6
7
7
A
M
M
C
C
φ
0.10
φ
0.25
B
C
0.25
0.15 C
A
B
C
SEATING PLANE
eD
(INK OR LASER)
CORNER
A1
A2
D
E
φ
05
A1 CORNER ID.
1.00±0.5
1
A
A1
COA1
NX
φ
b
SD
SE
eE
E1
D1
1
2
3
4
5
6
7
8
A
C
B
D
F
E
G
H
相關PDF資料
PDF描述
L256MH123RF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256MH123RI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256ML113RF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256ML113RI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256ML123RF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
相關代理商/技術參數(shù)
參數(shù)描述
L256MH123RF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256MH123RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256ML113RF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256ML113RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
L256ML123RF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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