參數(shù)資料
型號: L1SS356T1
廠商: 樂山無線電股份有限公司
英文描述: Band Switching Diode
中文描述: 波段開關(guān)二極管
文件頁數(shù): 1/3頁
文件大?。?/td> 54K
代理商: L1SS356T1
LESHAN RADIO COMPANY, LTD.
L1SS356T1–1/3
Band Switching Diode
2
ANODE
1
CATHODE
SOD– 323
1
2
L1SS356T1
z
Applications
High frequency switching
z
Features
1) Small surface mounting type.
2) High reliability.
z
Construction
Silicon epitaxial planar
Absolute maximum ratings (T
A
=25
°
C)
Parameter
DC reverse voltage
DC forward current
Junction temperature
Storage temperature
Symbol
V
R
I
F
T
j
T
stg
Limits
35
100
125
-55~+125
Unit
V
mA
°
C
°
C
Electrical characteristics (T
A
=25
°
C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals C
T
Forward operating resistance r
F
Symbol
V
F
I
R
Min.
Typ.
Max.
1.0
10
1.2
0.9
Unit
V
nA
pF
Conditions
I
F
=10mA
V
R
=25V
V
R
=6V, f =1MHz
I
F
=2mA, f =100MHz
Driver Marking
L1SS356T1
=
B
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