參數(shù)資料
型號(hào): L09ESD3V3CP2
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 90 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝: GREEN, PLASTIC PACKAGE-2
文件頁數(shù): 1/5頁
文件大?。?/td> 240K
代理商: L09ESD3V3CP2
PIN A SSIGNMENT
1
Cathode
2
Cathode
LITE-ON
SEMICONDUCTOR
L09ESD3V3CP2
ESD PROTECTION DEVICE
GENERAL DESCRIPTION
L09ESD3V3CP2 is designed to replace multilayer varistors (MLVs) in
portable applications where low operating voltage is vital. They offer
superior electrical characteristics such as lower clamping voltage and no
device degradation when compared to MLVs. They are designed
to protect sensitive semiconductor components from damage or upset
due to electrostatic discharge (ESD), lightning, electrical fast transients
(EFT), and cable discharge events (CDE).
FEATURES
Protects one power or I/O line
Max. peak pulse power : Ppp = 90W at tp = 8/20 us.
Low clamping voltage
IEC 61000-4-2, level 4 ( ESD ), > ±15KV ( air ) ; > ±8KV ( contact )
APPLICATION
Cellular Handsets & Accessories
Notebooks & Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
MP3 Players
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish), solderable
per J-STD-002 and JESD22-B/02.
Moisture Sensitivity: Leve 1 per J-STD-020C
Component in accordance to RoHs 2002/95/E
SOD-923
MAXIMUM RATINGS (Tj= 25℃unless otherwise noticed)
Rating
Symbol
Value
Unit
Peak Pulse Power (tp = 8/20us)
Ppk
90
W
Peak Pulse Current (tp = 8/20us)
Ipp
5
A
Operating Junction Temperature Range
TJ
-55 to + 125
Storage Temperature Range
Tstg
-55 to + 150
Soldering Temperature, t max = 10s
TL
260
ELECTRICAL CHARACTERISTICS (Tj= 25℃unless otherwise noticed)
Parameter
Symbol
Conditions
MIn
Typ
Max
Unit
Reverse standoff voltage
VRWM
---
3.3
V
Punch Through Voltage
VPT
ISB = 2uA
3.5
---
V
Snap-Back Voltage
VSB
ISB = 50 mA
2.8
---
V
Reverse leakage current
IRM
VDRM = 3.3V
---
0.05
0.5
uA
Clamping Voltage
VC
IPP = 1A, tp = 8/20s
---
6.0
8.0
V
Clamping Voltage
VC
IPP = 5 A, tp = 8/20s
---
8.5
18
V
Junction capacitance
CJ
VR = 0V, f = 1MHz
---
11
15
pF
REV. 0, Oct-2010, KSIR46
SOD-923
DIM.
MIN.
MAX.
A
0.36
0.41
B
0.18
0.26
C
0.08
0.14
D
0.76
0.84
E
0.56
0.64
F
0.92
1.08
All Dimensions in millimeter
STAND-OFF VOLTAGE – 3.3 Volts
POWER DISSIPATION – 90 WATTS
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