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參數(shù)資料
| 型號： | L034 |
| 廠商： | IXYS Corporation |
| 英文描述： | MegaMOSTMFET Module |
| 中文描述： | MegaMOSTMFET模塊 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 77K |
| 代理商： | L034 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
Symbol
Test
Conditions
Characteristic
unless
otherwise
min.
Values
specified)
(T
J
=
25
°
C,
typ. max.
g
fs
V
DS
=10V;
I
D
=0.5I
D25
pulsed
TBD
S
C
iss
48
nF
C
oss
V
GS
=0V, V
DS
=25V, f=1 MHz 8.8 nF
C
rss
3.1
nF
t
d(on)
210
ns
t
r
V
GS
=10V,
V
DS
=0.5V
DSS
,
I
D
=0.5I
D25
500 ns
t
d(off)
R
G
= 1
(External)
900
ns
t
f
Q
g
350
2090
ns
nC
Q
gs
V
GS
=10V,
V
DS
=0.5V
DSS
,
I
D
=0.5I
D25
385
nC
Q
gd
1045
nC
R
thJC
0.056K/W
R
thJK
with 30
μ
m heat transfer paste
0.083K/W
Source-Drain
Diode
Characteristic
unless
otherwise
min.
Values
specified)
(T
J
=
25
°
C,
Symbol
Test
Conditions
typ. max.
I
S
V
GS
=0
385
A
I
SM
Repetitive;
pulse
width
limited
by
T
JM
1540
A
V
SD
I
=I
;
Pulse
V
=0V,
test,
0.9
1.2
V
t
≤
300
μ
s,
duty
cycle
d
≤
2%
t
rr
I
F
= I
S
, -di/dt = 1200 A/
Dimensions in mm (1 mm = 0.0394")
VMO 380-02 F
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