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參數(shù)資料
| 型號： | KU-BAND |
| 英文描述： | GaAs MMIC VSAT Power Amplifier， 1.4W， 14.0-14.5 GHz |
| 中文描述： | 砷化鎵微波單片集成電路的VSAT功率放大器，1.4W輸出功率，14.0-14.5千兆赫 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | KU-BAND |
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 3.0
Typical Bias Configuration
3,4,7,8
Absolute Maximum Ratings
1,2,3,4
Parameter
V
DD
V
GG
Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
I
ds
1. Operation of this device outside any of these limits may cause
permanent damage.
2. Case Temperature (T
) = +25°C.
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (V
GG
),
followed by connection +9 volts to pin 6 (V
). Note sequence.
4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the
ouput port is a short circuit.
7. For optimum IP
performance, the V
DD
bypass capacitors should
be placed within 0.5 inches of pin 6.
8. Resistor and capacitors surrounding the amplifier are suggestions
and not included as part of the AM42-0002.
Absolute Maximum
12 Volts
-10 Volts
13.2 W
+23 dBm
150°C
-65°C to +150°C
1900 mA
Pin No.
Pin Name
Description
1
GND
DC and RF Ground
2
GND
DC and RF Ground
3
IN
RF Input
4
V
GG
Gate Supply
5
GND
DC and RF Ground
6
V
DD
Voltage Drain Supply
7
V
det
Output Power Detector
8
OUT
RF Output
9
GND
DC and RF Ground
10
GND
DC and RF Ground
V
det
μ
F
AM42-0002
μ
F
3.3
0.01
0.01
10 K
3
IN
OUT
8
7
6
V
DD
V
GG
GND
1,2,5,9,10
4
μ
F
GaAs MMIC VSAT Power Amplifier 1.4W, 14.0 - 14.5 GHz
AM42-0002
2
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