參數(shù)資料
型號(hào): KTX321U
廠(chǎng)商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR
中文描述: 外延平面PNP晶體管N通道MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 106K
代理商: KTX321U
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
MILLIMETERS
+
+
+
A
B
D
G
US6
2.00 0.20
1.25 0.1
0.65
2.1 0.1
0.2+0.10/-0.05
0-0.1
+
0.9 0.1
0.15+0.1/-0.05
B1
C
H
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A
1.3 0.1
A1
5
+
1. Q EMITTER
2. Q BASE
4. Q SOURCE
5. Q GATE
6. Q COLLECTOR
3. Q DRAIN
2003. 11. 20
1/6
SEMICONDUCTOR
TECHNICAL DATA
KTX321U
EPITAXIAL PLANAR PNP TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
Revision No : 0
Q
1
MAXIMUM RATING (Ta=25
)
1
2
3
6
5
4
Q1
Q2
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-500
mA
I
CP *
-1
A
Collector Power Dissipation
P
C *
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Q
2
MAXIMUM RATING (Ta=25
)
BR
Type Name
4
1
2
3
5
6
MARKING
EQUIVALENT CIRCUIT (TOP VIEW)
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
100
mA
Drain Power Dissipation
P
C **
150
mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55
150
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
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