參數(shù)資料
型號: KTC4793
廠商: KEC Holdings
英文描述: TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
中文描述: 三重擴散NPN晶體管(功率放大器驅(qū)動器級放大器)
文件頁數(shù): 1/2頁
文件大小: 392K
代理商: KTC4793
2003. 2. 17
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC4793
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATINS.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.)
Complementary Pair with KTA1837.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70
0.30
0.85 MAX
3.20
0.20
3.00
0.30
A
B
C
D
E
F
G
H
12.30 MAX
0.75 MAX
13.60
0.50
3.90 MAX
1.20
1.30
2.54
4.50
0.20
6.80
2.60
0.20
10
25
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
2.60
0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=230V, I
E
=0
-
-
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
230
-
-
V
DC Current Gain
h
FE
V
CE
=5V, I
C
=100mA
100
-
320
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
1.5
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=500mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=100mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
20
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
230
V
Collector-Emitter Voltage
V
CEO
230
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
Base Current
I
B
0.1
A
Collector Power
Dissipation
Ta=25
P
C
2.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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