參數(shù)資料
型號： KTC3551T
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR NPN TRANSISTOR
中文描述： 外延平面NPN晶體管
文件頁數(shù)： 1/3頁
文件大小： 89K
代理商： KTC3551T
2001. 6. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3551T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dis sipation.
Complementary to KTA1551T.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
+
A
B
D
E
F
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
+
+
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
+
0.95
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
G
H
I
J
K
L
0.60
0.55
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
80
V
Collector-Emitter Voltage
80
V
50
Emitter-Base Voltage
5
V
Collector Current
DC
1.0
A
Pulse
3
Base Current
200
mA
Collector Power Dissipation
0.9
W
Junction Temperature
150
Storage Temperature Range
T
stg
-55
150
* Package mounted on a ceramic board (600
0.8
)
CHARACTERISTIC
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE
f
T
C
ob
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=100 A, V
BE
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
I
C
=500mA, I
B
=10mA
I
C
=300mA, I
B
=6mA
I
C
=500mA, I
B
=10mA
V
CE
=2V, I
C
=100mA
V
CE
=10V, I
C
=300mA
V
CB
=10V, f=1MHz
-
-
0.1
A
Emitter Cut-off Current
Collector-Base Breakdown Voltage
-
-
-
-
-
-
0.1
-
-
-
-
190
135
A
V
V
V
V
mV
mV
80
80
50
5
-
-
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
130
90
Base-Emitter Saturation Voltage
DC Current Gain
-
0.81
-
1.2
560
V
200
Transition Frequency
-
420
-
MHz
Collector Output Capacitance
-
6
-
pF
Switching
Time
Turn-On Time
t
on
-
35
-
nS
Storage Time
t
stg
-
330
-
Fall Time
t
f
-
40
-
Type Name
Marking
Lot No.
H K
I
B1
B2
I
INPUT
OUTPUT
50
100
μ
F
PW=20
μ
s
DC 1%
470
μ
F
R
V
B
R
L
R
V =-5V
V =25V
20I =-20I =I =500mA
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