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參數(shù)資料
| 型號： | KTC3114 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（通用，開關） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 395K |
| 代理商： | KTC3114 |
2003. 7. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3114
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
High DC Current Gain : h
FE
=600
3600.
MAXIMUM RATING (Ta=25
)
TO-126
H
J
MILLIMETERS
8.3 MAX
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
5.8
0.7
Φ
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
15.50 0.5
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note: h
FE
Classification A:600
1800, B:1200
3600
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
600
-
3600
Collector- Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=10mA
100
250
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA
-
3.5
-
pF
Noise Figure
NF(1)
f=100Hz, Rg=10k
V
CE
=6V, I
C
=0.1mA
-
0.5
-
dB
NF(2)
f=1kHz, Rg=10k
-
0.3
-
dB
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
Collector Power Dissipation
P
C
1.5
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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