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參數(shù)資料
| 型號： | KTA1553T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 中文描述： | 外延平面PNP晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 95K |
| 代理商： | KTA1553T |
2001. 6. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1553T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
Ultrasmall-Sized Package permitting applied sets to be
made small and slim.
High Allowable Power Dissipation.
Complementary to KTC3553T.
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
+
+
D
E
F
G
H
I
J
K
L
TSM
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
+
+
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
DC
I
C
-5
A
Pulse
I
CP
-7
Base Current
I
B
-1.2
A
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
* Package mounted on a ceramic board (600
0.8
)
Type Name
Marking
Lot No.
S M
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-40V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10
A, I
E
=0
I
C
=-1mA, I
B
=0
-50
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10
A, I
C
=0
I
C
=-2A, I
B
=-40mA
-6
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
-225
-450
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-2A, I
B
=-40mA
-
-0.80
-1.2
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-500mA
200
-
560
Transition Frequency
f
T
V
CE
=-10V, I
C
=-500mA
-
250
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
50
-
pF
Swiitching
Time
Turn-On Time
t
on
-
39
-
nS
Storage Time
t
stg
-
225
-
Fall Time
t
f
-
25
-
I
B1
B2
I
INPUT
OUTPUT
50
24
100
μ
F
PW=20
μ
s
DC 1%
470
μ
F
R
V
B
R
V =5V
V =-12V
-20I =20I =I =-2.5A
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