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參數(shù)資料
| 型號： | KTA1275 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 中文描述： | 外延平面PNP晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 102K |
| 代理商： | KTA1275 |
1998. 12. 19
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1275
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
COLOR TV VERT. DEFELECTION OUTPUT APPLICATION.
COLOR TV CLASS B SOUND OUTPUT APPLICATION.
FEATURES
High Voltage : V
CEO
=-160V.
Large Continuous Collector Current Capability.
Complementary to KTC3228.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. COLLECTOR
3. BASE
P
Q
R
S
TO-92L
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
25
1.25
Φ
1.50
0.10 MAX
12.50 0.50
1.00
O
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
G
P
H
H
E
D
H
R
S
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification R:60
120 0:100
200, Y:160
320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-160
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-1
A
Base Current
I
B
-0.5
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-150V, I
E
=0
-
-
-1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-6V, I
C
=0
-
-
-1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-160
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-5V, I
C
=-200mA
60
-
320
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-1.5
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-5mA
-0.45
-
-0.75
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-200mA
15
50
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
35
pF
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相關代理商/技術參數(shù) |
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| KTA1279 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE) |
| KTA1279_05 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
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