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參數(shù)資料
| 型號： | KTA1045D |
| 廠商： | KEC Holdings |
| 英文描述： | Neutrik Cable end X-HD series 3 pin male |
| 中文描述： | 外延平面PNP晶體管（低頻功率放大器，中速開關(guān)） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 399K |
| 代理商： | KTA1045D |
2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1045D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 5
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage V
CEO
120V, high current 1A.
Low saturation voltage and good linearity of h
FE
.
Complementary to KTC2025D/L
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
E
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
F
H
I
J
K
L
M
O
P
Q
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
+
+
+
+
+
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
)
(Note) : h
FE
(1) Classification Y:100
200, GR:160
320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1
A
I
CP
-2
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
8
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1) Note
h
FE
(2)
f
T
C
ob
V
CE(sat)
V
BE(sat)
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10 A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10 A, I
C
=0
V
CE
=-5V, I
C
=-50mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
MIN.
-
-
-120
-120
-5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
110
30
-0.15
-0.85
MAX.
-1
-1
-
-
-
320
-
-
-
-0.4
-1.2
UNIT
A
A
V
V
V
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MHz
pF
V
V
Switching Time
Turn-on Time
t
on
-
80
-
nS
Turn-off Time
t
off
-
100
-
Storage Time
t
stg
-
600
-
I
B1
B2
I
20
μ
sec
1uF
1uF
24
1
100
I =10I =-10I =500mA
C
V =-12V
2V
-12V
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
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