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參數(shù)資料
| 型號(hào)： | KSR1114 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Switching Application |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | KSR1114 |
2001 Fairchild Semiconductor Corporation
Rev. A2, July 2001
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
Parameter
Value
50
50
10
100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°
C
°
C
Test Condition
I
C
=10
μ
A, I
E
=0
I
C
=100
μ
A, I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
V
CB
=10V, I
E
=0
f=1.0MHz
V
CE
=5V, I
C
=100
μ
A
V
CE
=0.2V, I
C
=5mA
Min.
50
50
Typ.
Max.
Units
V
V
μ
A
0.1
68
0.3
V
250
3.7
MHz
pF
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
0.5
V
V
1.3
6.2
0.11
3.2
0.09
4.7
0.1
K
1. Base 2. Emitter 3. Collector
KSR1114
Switching Application
(Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R
1
=4.7K
, R
2
=47K
)
Complement to KSR2114
R14
Marking
Equivalent Circuit
B
E
C
R1
R2
SOT-23
1
2
3
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