參數資料
型號: KSE5741
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage Power Switching In Inductive Circuits
中文描述: 8 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: TO-220, 3 PIN
文件頁數: 1/5頁
文件大小: 47K
代理商: KSE5741
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
BV
CEO
(sus)
Collector-Emitter Sustaining Voltage
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* PW=5ms, Duty Cycle=10%
Parameter
Value
Units
: KSE5740
: KSE5741
: KSE5742
300
350
400
600
700
800
8
8
16
2.5
5
80
150
V
V
V
V
V
V
V
A
A
A
A
W
°
C
°
C
V
CEV
Collector-Emitter Voltage : KSE5740
: KSE5741
: KSE5742
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
- 65 ~ 150
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Sustaining Voltage
: KSE5740
: KSE5741
: KSE5742
I
C
= 50mA, I
B
=0
300
350
400
V
V
V
I
CEV
I
EBO
h
FE
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
CEV
=Rate Value, V
BE(OFF)
=1.5V
V
EB
= 8V, I
C
= 0
V
CE
=5V, I
C
= 0.5A
V
CE
=5V, I
C
= 4A
I
C
=4A, I
B
= 0.2A
I
C
=8A, I
B
= 0.4A
I
C
=4A, I
B
= 0.2A
I
C
=8A, I
B
= 0.4A
I
F
=5A
V
CC
= 250V, I
C
(pk) = 6A
I
B1
= I
B2
= 0.25A
t
P
= 25
μ
s
Duty Cycle
1%
1
75
mA
mA
50
200
100
400
V
CE
(sat)
Collector-Emitter Saturation Voltage
2
3
2.5
3.5
2.5
V
V
V
V
V
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
V
BE
(sat)
Base-Emitter Saturation Voltage
V
F
t
D
t
R
t
S
t
F
t
SV
t
C
Diode Forward Voltage
Delay Time
Rise Time
Storage Time
Fall Time
Voltage Storage Time
Cross-over Time
0.04
0.5
8
2
4
2
I
C
(pk) = 6A, V
CE
(pk) = 250V
I
B
1= 0.06A, V
BE
(off) = 5V
KSE5740/5741/5742
High Voltage Power Switching In Inductive
Circuits
High Voltage Power Darlington TR
Small Engine lgnition
Switching Regulators
Inverters
Solenold and Relay Drivers
Motor Control
1.Base 2.Collector 3.Emitter
1
TO-220
相關PDF資料
PDF描述
KSE5742 High Voltage Power Switching In Inductive Circuits
KSE700 Monolithic Construction With Built-in Base- Emitter Resistors
KSE701 Monolithic Construction With Built-in Base- Emitter Resistors
KSE703 Monolithic Construction With Built-in Base- Emitter Resistors
KSE800 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
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KSE700 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Construction With Built-in Base- Emitter Resistors
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KSE700STU 功能描述:達林頓晶體管 PNP Epitaxial Sil Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel